Гольцман Григорий Наумович
Московский институт электроники и математики им. А.Н. Тихонова
Профессиональные интересы
Должности
- Заведующий кафедрой — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
- Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
Био
- · Начал работать в НИУ ВШЭ в 2013 году.
- · Научно-педагогический стаж: 55 лет.
Образование
- 1988 · Ученое звание: Профессор
- 1985 · Доктор физико-математических наук
- 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»
Опыт работы
- · Общий стаж - 54 года
- · Научно-педагогический стаж - 51 год
- · Преподавательский стаж - 44 года
Награды и поощрения
- · Медаль "В память 850-летия Москвы" (февраль 1997)
- · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
- · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
- · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
- · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
- · Лучший преподаватель — 2014
Гранты и проекты
- — · на соискание учёной степени кандидата наук
Конференции (2)
Показать все
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications
Идентификаторы исследователя
- ORCID:
0000-0002-1960-9161 - ResearcherID:
A-4189-2014 - SPIN РИНЦ:
4622-7870 - Google Scholar: https://scholar.google.ru/citations?user=qljeUfEAAAAJ&hl=ru
- Scopus AuthorID:
7006771637
Публикации (253)
Graphene-layer and graphene-nanoribbon FETs as THz detectors
2018 · ARTICLE · en
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer
2018 · ARTICLE · en
In this paper we report on the results of the study of the Ti/Au / n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profle or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.2{1.5 and 0.75{0.85 eV, respectively. We observed the lowering of the at band barrier height of 80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ohm was obtained. The measurements of the input frequency bandwidth within the range of 400{480 GHz were performed. The diodes demonstrated quite consistent frequency response regardless the type of the silicon dopant profle chosen, the cuto frequency value of 655 GHz was evaluated. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be benefcial for implementation of a PSD intended for the operation within the 'super-THz' range.
Reduction of Phonon Escape Time for NbN Hot Electron Bolometers by Using GaN Buffer Layers
2017 · ARTICLE · en
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.
Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers
2017 · ARTICLE · en
Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
Superconducting detector for visible and near-infrared quantum emitters [Invited]
2017 · ARTICLE · en
Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.
Heterodyne spectroscopy with superconducting single-photon detector
2017 · CHAPTER · en
We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length.
Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors
2017 · ARTICLE · en
We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 ± 1) ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.
Comparison of Hot Spot Formation in NbN and MoN Thin Superconducting Films after Photon Absorption
2017 · ARTICLE · en
In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time.
Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system
2017 · ARTICLE · en
Recently bright-light control of the SSPD has been demonstrated. This attack employed a "backdoor" in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains "latched" in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.
Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength
2017 · ARTICLE · en
Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector's pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.
Курсы (3)
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Технологические основы квантовых вычислений и квантовых коммуникаций (семинар наставника) · 5 раза
2025/2026, 2024/2025, 2023/2024, 2022/2023, 2021/2022 · семинар наставника · рус
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Устройства для квантовых вычислений и коммуникации · 3 раза
2025/2026, 2023/2024, 2022/2023 · Бакалавриат · рус
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Квантовые компьютеры и квантовые коммуникации
2021/2022 · Магистратура · рус