Гольцман Григорий Наумович
Московский институт электроники и математики им. А.Н. Тихонова
Профессиональные интересы
Должности
- Заведующий кафедрой — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
- Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
Био
- · Начал работать в НИУ ВШЭ в 2013 году.
- · Научно-педагогический стаж: 55 лет.
Образование
- 1988 · Ученое звание: Профессор
- 1985 · Доктор физико-математических наук
- 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»
Опыт работы
- · Общий стаж - 54 года
- · Научно-педагогический стаж - 51 год
- · Преподавательский стаж - 44 года
Награды и поощрения
- · Медаль "В память 850-летия Москвы" (февраль 1997)
- · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
- · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
- · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
- · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
- · Лучший преподаватель — 2014
Гранты и проекты
- — · на соискание учёной степени кандидата наук
Конференции (2)
Показать все
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications
Идентификаторы исследователя
- ORCID:
0000-0002-1960-9161 - ResearcherID:
A-4189-2014 - SPIN РИНЦ:
4622-7870 - Google Scholar: https://scholar.google.ru/citations?user=qljeUfEAAAAJ&hl=ru
- Scopus AuthorID:
7006771637
Публикации (253)
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices
2018 · ARTICLE · en
We report on the sub-terahertz (THz) (129–450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.
Superconducting nanowire single-photon detector on lithium niobate
2018 · ARTICLE · en
We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s-1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
Thermal properties of NbN single-photon detectors
2018 · ARTICLE · en
We investigate thermal properties of a NbN single-photon detector capable of unit internal detec- tion efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the ther- mal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
Optimization of on-chip photonic delay lines for telecom wavelengths
2018 · ARTICLE · en
In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm
Superconducting single-photon detector for integrated waveguide spectrometer
2018 · ARTICLE · en
We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide
2018 · ARTICLE · en
We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si 3 N 4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing
2018 · ARTICLE · en
Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2× 10 5) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.
Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing
2018 · ARTICLE · en
In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q= 5× 105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q 3
Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer
2018 · ARTICLE · en
In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV)
2018 · ARTICLE · en
Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation function was realized, as well as the yield of optimized technique equals 12.5% is shown.
Курсы (3)
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Технологические основы квантовых вычислений и квантовых коммуникаций (семинар наставника) · 5 раза
2025/2026, 2024/2025, 2023/2024, 2022/2023, 2021/2022 · семинар наставника · рус
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Устройства для квантовых вычислений и коммуникации · 3 раза
2025/2026, 2023/2024, 2022/2023 · Бакалавриат · рус
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Квантовые компьютеры и квантовые коммуникации
2021/2022 · Магистратура · рус