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Гольцман Григорий Наумович

Московский институт электроники и математики им. А.Н. Тихонова

Профиль на hse.ru ↗ тел.: +7 (495) 772-95-90 | 15220
Публикаций
253
Языков
2
Наград
6
Конференций
2
Профиль Публикации (253) Курсы (3)

Профессиональные интересы

субмиллиметровая ЛОВ-спектроскопия мелких примесей в монокристаллах Ge, Si и GaAsнеравновесные явления в сверхпроводниковых нанопроводах при поглощении ИК фотоновметоды регистрации слабого терагерцового и инфракрасного излученияновые приборы для радиоастрономии: сверхпроводниковые болометры на горячих электронахновые приборы для квантовой оптики: сверхпроводниковые счетчики ИК фотонов

Должности

  • Заведующий кафедройМосковский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
  • ПрофессорМосковский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»

Био

  • · Начал работать в НИУ ВШЭ в 2013 году.
  • · Научно-педагогический стаж: 55 лет.

Образование

  • 1988 · Ученое звание: Профессор
  • 1985 · Доктор физико-математических наук
  • 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»

Опыт работы

  • · Общий стаж - 54 года
  • · Научно-педагогический стаж - 51 год
  • · Преподавательский стаж - 44 года

Награды и поощрения

  • · Медаль "В память 850-летия Москвы" (февраль 1997)
  • · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
  • · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
  • · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
  • · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
  • · Лучший преподаватель — 2014

Гранты и проекты

  • · на соискание учёной степени кандидата наук

Конференции (2)

Показать все
  • · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
  • · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications

Идентификаторы исследователя

Публикации (253)

On-chip coherent detection with quantum limited sensitivity

2017 · ARTICLE · en

While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 1011. By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously.

Development of a Silicon Membrane-Based Multipixel Hot Electron Bolometer Receiver

2017 · ARTICLE · en

We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.

Superconducting nanowire single photon detector for coherent detection of weak signals

2017 · ARTICLE · en

Traditional photon detectors are operated in the direct detection mode, counting incident photons with a known quantum efficiency. Here, we have investigated a superconducting nanowire single photon detector (SNSPD) operated as a photon counting mixer at telecommunication wavelength around 1.5 μm. This regime of operation combines excellent sensitivity of a photon counting detector with excellent spectral resolution given by the heterodyne technique. Advantageously, we have found that low local oscillator (LO) power of the order of hundreds of femtowatts to a few picowatts is sufficient for clear observation of the incident test signal with the sensitivity approaching the quantum limit. With further optimization, the required LO power could be significantly reduced, which is promising for many practical applications, such as the development of receiver matrices or recording ultralow signals at a level of less-than-one-photon per second. In addition to a traditional NbN-based SNSPD operated with normal incidence coupling, we also use detectors with a travelling wave geometry, where a NbN nanowire is placed on the top of a Si3N4 nanophotonic waveguide. This approach is fully scalable and a large number of devices could be integrated on a single chip.

Slow Electron-Phonon Cooling in Superconducting Diamond Films

2017 · ARTICLE · en

We have measured the electron-phonon energy-relaxation time, τeph, in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τeph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.

Spectrally multiplexed single-photon detection with hybrid superconducting nanophotonic circuits

2017 · ARTICLE · en

The detection of individual photons by superconducting nanowire single-photon detectors is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multicolor imaging techniques, such as single-photon spectroscopy, fluorescence resonance energy transfer microscopy, and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz at 80% of the devices’ critical current. We demonstrate multidetector devices for telecommunication and visible wavelengths, and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength-division multiplexing on a chip.

Photon Absorption Near the Gap Frequency in a Hot Electron Bolometer

2017 · ARTICLE · en

Abstract: The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.

Optimisation of spontaneous four-wave mixing in a ring microcavity

2017 · ARTICLE · en

A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the dispersion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numerical calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: completely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable.

Comparison of Hot Spot Formation in NbN and MoN Thin Superconducting Films After Photon Absorption

2017 · ARTICLE · en

In superconducting single-photon detectors (SSPD), the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here, we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoN∞ detectors, we study the dependence of detection efficiency on bias current, photon energy, and strip width, and compare it with NbN SSPD. We observe nonlinear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current, which we attribute to longer electron-phonon interaction time.

Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength

2017 · CHAPTER · en

Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector's pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.

Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system

2017 · CHAPTER · en

Recently bright-light control of the SSPD has been demonstrated. This attack employed a "backdoor" in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains "latched" in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs.

Курсы (3)