Гольцман Григорий Наумович
Московский институт электроники и математики им. А.Н. Тихонова
Профессиональные интересы
Должности
- Заведующий кафедрой — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
- Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
Био
- · Начал работать в НИУ ВШЭ в 2013 году.
- · Научно-педагогический стаж: 55 лет.
Образование
- 1988 · Ученое звание: Профессор
- 1985 · Доктор физико-математических наук
- 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»
Опыт работы
- · Общий стаж - 54 года
- · Научно-педагогический стаж - 51 год
- · Преподавательский стаж - 44 года
Награды и поощрения
- · Медаль "В память 850-летия Москвы" (февраль 1997)
- · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
- · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
- · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
- · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
- · Лучший преподаватель — 2014
Гранты и проекты
- — · на соискание учёной степени кандидата наук
Конференции (2)
Показать все
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications
Идентификаторы исследователя
- ORCID:
0000-0002-1960-9161 - ResearcherID:
A-4189-2014 - SPIN РИНЦ:
4622-7870 - Google Scholar: https://scholar.google.ru/citations?user=qljeUfEAAAAJ&hl=ru
- Scopus AuthorID:
7006771637
Публикации (253)
Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit
2020 в печати · ARTICLE · en
In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.
Sub-shot-noise-limited fiber-optic quantum receiver
2020 · ARTICLE · en
We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector
2020 · ARTICLE · en
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
Planar Schottky diode with a Γ-shaped anode suspended bridge
2020 · ARTICLE · en
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
Superconductivity in epitaxial TiN films points to surface magnetic disorder
2019 · ARTICLE · en
We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 10^12cm^−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films
Countermeasure against bright-light attack on superconducting nanowire single-photon detector in quantum key distribution
2019 · ARTICLE · en
We present an active anti-latching system for superconducting nanowire single-photon detectors. We experimentally test it against a bright-light attack, previously used to compromise security of quantum key distribution. Although our system detects continuous blinding, the detector is shown to be partially blindable and controllable by specially tailored sequences of bright pulses. Improvements to the countermeasure are suggested.
Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency
2019 · ARTICLE · en
We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the twospot detection efficiency and extract the hot-spot interaction length of SNSPDs with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm.
Do humans “shine” in the sub THz?
2019 · CHAPTER · en
Radiometry experiments, performed on human subjects, show that in the vicinity of a central frequency of 507 GHz the emission of the human skin is substantially nonequilibrium in its nature. The intensity of the radiation registered using a superconducting integrated receiver (SIR) [1], was correlated with the level of the physical and mental stress of subject under examination. This result suggests that human skin may generate sub-THz waves.
Study of human skin radiation in the terahertz frequency range
2019 · CHAPTER · en
The radiation of human skin in the terahertz frequency range under the influence of mental stresses has been studied in the current work. An experimental setup for observation of changes in human skin radiation, which occur under the influence of psychological stresses, by means of a superconducting integrated receiver has been developed. More than 30 volunteers participate in these studies, which allows us to verify presence of correlation between the signals from the superconducting integrated terahertz receiver and other sensors that monitor human mental stress.
Room Temperature Silicon Detector for IR Range Coated with Ag2S Quantum Dots
2019 · ARTICLE · en
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag2S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag2S detector is 1011 cm √Hz W−1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
Курсы (3)
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Технологические основы квантовых вычислений и квантовых коммуникаций (семинар наставника) · 5 раза
2025/2026, 2024/2025, 2023/2024, 2022/2023, 2021/2022 · семинар наставника · рус
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Устройства для квантовых вычислений и коммуникации · 3 раза
2025/2026, 2023/2024, 2022/2023 · Бакалавриат · рус
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Квантовые компьютеры и квантовые коммуникации
2021/2022 · Магистратура · рус