Гольцман Григорий Наумович
Московский институт электроники и математики им. А.Н. Тихонова
Профессиональные интересы
Должности
- Заведующий кафедрой — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
- Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
Био
- · Начал работать в НИУ ВШЭ в 2013 году.
- · Научно-педагогический стаж: 55 лет.
Образование
- 1988 · Ученое звание: Профессор
- 1985 · Доктор физико-математических наук
- 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»
Опыт работы
- · Общий стаж - 54 года
- · Научно-педагогический стаж - 51 год
- · Преподавательский стаж - 44 года
Награды и поощрения
- · Медаль "В память 850-летия Москвы" (февраль 1997)
- · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
- · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
- · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
- · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
- · Лучший преподаватель — 2014
Гранты и проекты
- — · на соискание учёной степени кандидата наук
Конференции (2)
Показать все
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications
Идентификаторы исследователя
- ORCID:
0000-0002-1960-9161 - ResearcherID:
A-4189-2014 - SPIN РИНЦ:
4622-7870 - Google Scholar: https://scholar.google.ru/citations?user=qljeUfEAAAAJ&hl=ru
- Scopus AuthorID:
7006771637
Публикации (253)
Size effect of the Ge2Sb2Te5 cell atop the silicon nitride O-ring resonator on the attenuation coefficient
2021 · ARTICLE · en
We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thicknesses and lengths and have also measured transmission spectra O-ring resonators for GST cells of various length and phase states. An analysis of the changes in the Q-factors has enabled us to identify the region of the GST cells where light scattering and absorption dominate and find the size dependence ofamorphous and crystalline GST attenuation coefficients. The demonstrated results pave the way to high energy-efficient on-chip devices of a small footprint that can be switched either optically or electrically.
Membrane-integrated planar Schottky diodes for waveguide mm-wave detectors
2021 · ARTICLE · en
We report on the technology of membrane-integrated planar Schottky diodes intended for use as part of waveguide mm-Wave detectors. The diode fabrication process mainly relies on selective etching of GaAs enabling the implementation of both a metallic suspended bridge terminated by a microscale Schottky contact to n-GaAs and a 140-200 μm thick SI-GaAs membrane underneath. The membrane acts as a quarter-wave backshort, once the diode chip is installed into the waveguide detector block and its back surface is metalized. The diode is fabricated between the arms of a bow-tie antenna coupled to a rectangular waveguide. EM modeling and preliminary performance tests suggest that the technology developed is suitable for the implementation of waveguide detectors operational within 100-180 GHz.
Characterization of focusing grating couplers for telecom wavelengths in the first and second diffraction order
2021 · CHAPTER · en
In this work we studied how focusing grating couplers, developed for telecommunication C-band wavelength range, can be applied in the near infrared range. In the paper we presented prospects of usage of both first and second diffraction maxima of theoretically computed diffraction grating couplers for photonic aims. The dependence of the central wavelength of the grating on the etching depth of the photonic layer, on the period and filling factor of the grating was studied. We have compared our experimental results with numerical study, performed using finite elements method of solving differential equations. The work is important for different photonic applications and introduces new prospects in application of the already fabricated devices, developed for telecommunication wavelengths.
Three-dimensional polymer wire bonds on chip: morphology and functionality
2020 в печати · ARTICLE · en
Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
Electron energy relaxation in disordered superconducting NbN films
2020 в печати · ARTICLE · en
We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qT l (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe-ph ∼ T n with the exponents n ≈ 3.2–3.8.We found that in this temperature range τe-ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qT l (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe-ph ∼ T n with the exponents n ≈ 3.2–3.8.We found that in this temperature range τe-ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.
On chip carbon nanotube tunneling spectroscopy
2020 · ARTICLE · en
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method–tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. © 2019, © 2019 Taylor & Francis Group, LLC.
Development of focusing grating couplers for lithium niobate on insulator platform
2020 · ARTICLE · en
In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations.
Study of microheater's phase modulation for on-chip Kennedy receiver
2020 · ARTICLE · en
In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation
2020 · ARTICLE · en
In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime
2020 · ARTICLE · en
The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states.
Курсы (3)
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Технологические основы квантовых вычислений и квантовых коммуникаций (семинар наставника) · 5 раза
2025/2026, 2024/2025, 2023/2024, 2022/2023, 2021/2022 · семинар наставника · рус
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Устройства для квантовых вычислений и коммуникации · 3 раза
2025/2026, 2023/2024, 2022/2023 · Бакалавриат · рус
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Квантовые компьютеры и квантовые коммуникации
2021/2022 · Магистратура · рус