Гольцман Григорий Наумович
Московский институт электроники и математики им. А.Н. Тихонова
Профессиональные интересы
Должности
- Заведующий кафедрой — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
- Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Базовая кафедра квантовой оптики и телекоммуникаций ЗАО «Сконтел»
Био
- · Начал работать в НИУ ВШЭ в 2013 году.
- · Научно-педагогический стаж: 55 лет.
Образование
- 1988 · Ученое звание: Профессор
- 1985 · Доктор физико-математических наук
- 1968 · Специалитет: Московский государственный педагогический институт им. В.И. Ленина, специальность «Физика», квалификация «Учитель физики и звание учителя средней школы»
Опыт работы
- · Общий стаж - 54 года
- · Научно-педагогический стаж - 51 год
- · Преподавательский стаж - 44 года
Награды и поощрения
- · Медаль "В память 850-летия Москвы" (февраль 1997)
- · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025)
- · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2020–2022, 2018–2020)
- · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
- · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)
- · Лучший преподаватель — 2014
Гранты и проекты
- — · на соискание учёной степени кандидата наук
Конференции (2)
Показать все
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: A mmWave Rod Antenna Array Compatible with a PCB Prototyping Technology
- · 2022: Школа-конференция с международным участием по оптоэлектронике, фотонике и нанобиоструктурам Saint Petersburg OPEN (Санкт-Петербург). Доклад: Thermo-optical effect in a Mach-Zehnder interferometer on a silicon nitride platform for quantum photonic applications
Идентификаторы исследователя
- ORCID:
0000-0002-1960-9161 - ResearcherID:
A-4189-2014 - SPIN РИНЦ:
4622-7870 - Google Scholar: https://scholar.google.ru/citations?user=qljeUfEAAAAJ&hl=ru
- Scopus AuthorID:
7006771637
Публикации (253)
Terahertz Hot Electron Bolometer Coherent and Direct Detectors Utilizing Si Waveguiding Structures
2022 · ARTICLE · en
Terahertz coherent and direct detectors are in demand by numerous scientific and practical applications. Both cryogenic and room temperature detectors find use in astronomical, medical and security systems. Driven by the enlarged society needs for data transfer rates, they are also becoming of interest in terahertz communication area. Integrated Si photonic crystals are recently proposed as beneficial platform for terahertz integrated circuits. Some designs of Si power distribution networks including basic passive components already appear. However, development of nonlinear frequency conversion devices naturally compliant with the platform is at an early stage. In addition to integrability, the platform enables significant reduction of propagation losses as compared to widely used metallic waveguides at terahertz frequencies. In this paper, we overview conventional designs of input optics and power distribution networks of terahertz detectors. We also report on our recent developments in design and fabrication of terahertz HEB-based coherent and direct detectors making use of Si waveguiding structures.
Electron phase-breaking time in ultra-thin Nb films
2022 · ARTICLE · en
Here we study the temperature dependences of the electron phase-breaking time τϕ in ultra-thin superconducting niobium (Nb) films. In Nb films, passivated with a layer of silicon (Si), the observed temperature dependence of the phase-breaking time is τϕ ~ Т^(-2.5), is resembling the electron-phonon scattering. However, in the uncovered Nb films, we observe the saturation of τϕ at low temperatures, which may be a signature of the surface magnetic disorder, present in native Nb oxide on the film surface.
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
2022 · PREPRINT · en
In this paper, we report on the method of nondestructive quality control that can be used in fabrication of GaAs high-speed electronics. The method relies on the surface potential mapping and enables rigid in vivo analysis of transport properties of an active electronic device incorporated into a complex integrated circuit. The study is inspired by our ongoing development of a millimeter wave intelligent reflective surface for 6G communications. To provide desired beamforming capabilities, such a surface should utilize hundreds of identical microscale GaAs diode switches with series resistance of a few ohms. Thus, we develop a ladder-like layered ohmic contact to heavily Si-doped GaAs and cross-study it via transmission line method and Kelvin probe force microscopy. The contact resistivity as low as 0.15 μΩcm² is measured resulting in only a 0.6 Ω of resistance for the contact area of 3×3 m². Moreover, the tendencies observed suggest that one can rigidly analyze the evolution of contact resistance and the profile of resistivity under contact in response to rapid thermal annealing, once the surface potential map across the ``ladder'' is known.
Multimode interference splitter and Mach-Zehnder interferometer based on silicon metamaterial for subTHz range
2022 · CHAPTER · en
THz photonics range is a rapidly developing field of science with many practical applications in medicine, telecommunications, imaging, and others. From practical point of view many applications requires compact and multifunctional solutions, with a property of scalability. Such as in visible and infrared ranges photonic integrated circuits could solve given problem. In this work we are working on enlarging element base of purely silicon THz photonic integrated circuits. We consider 1x2 splitter based on multimode interferometer and its application for Mach-Zehnder interferometer on silicon integrated platform. Both devices on their own will find a huge number of applications in the THz range.
Tunnel field-effect transistors for sensitive terahertz detection
2021 в печати · ARTICLE · en
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/Hz−−−√Hz) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
A Comparison of VN and NbN Thin Films Towards Optimal SNSPD Efficiency
2021 · ARTICLE · en
Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials - NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors - vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast toNbNfilms with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance.
Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber
2021 · ARTICLE · en
High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the singlepixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the singlephoton level.
The Sub-THz Emission of the Human Body Under Physiological Stress
2021 · ARTICLE · en
We present evidence that in the sub-THz frequency band, human skin can be considered as an electromagnetic bio-metamaterial, in that its natural emission is a product of skin tissue geometry and embedded structures. Radiometry was performed on 32 human subjects from 480 to 700 GHz. Concurrently, the subjects were exposed to stress, while heart pulse rate (PS) and galvanic skin response (GSR) were also measured. The results are substantially different from the expected black body radiation signal of the skin surface. PS and GSR correlate to the emissivity. Using a simulation model for the skin, we find that the sweat duct is a critical element. The simulated frequency spectra qualitatively match the measured emission spectra and show that our sub-THz emission is modulated by our level of mental stress. This opens avenues for the remote monitoring of the human state.
Thermal Relaxation in Metal Films Limited by Diffuson Lattice Excitations of Amorphous Substrates
2021 · ARTICLE · en
We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P_2D∝T^n_e dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
I3M Proceedings 2021 International Multidisciplinary Modeling & Simulation Multiconference Anna Elmanova, Ilia Elmanov, Vadim Kovalyuk, Pavel An, Galina Chulkova and Gregory Goltsman, Integrated optical gas sensor based on O-ring resonator and loop waveguide mirror on silicon nitride platform, ISSN 2724-0029 ISBN 978-88-85741-57-7, 15-17 September 2021
2021 в печати · BOOK · en
A model of an integrated photonic device based on an O-ring resonator and loop waveguide reflector operated at telecom wavelength (1550) was developed.
Курсы (3)
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Технологические основы квантовых вычислений и квантовых коммуникаций (семинар наставника) · 5 раза
2025/2026, 2024/2025, 2023/2024, 2022/2023, 2021/2022 · семинар наставника · рус
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Устройства для квантовых вычислений и коммуникации · 3 раза
2025/2026, 2023/2024, 2022/2023 · Бакалавриат · рус
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Квантовые компьютеры и квантовые коммуникации
2021/2022 · Магистратура · рус