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Корнеев Александр Александрович

Московский институт электроники и математики им. А.Н. Тихонова

Профиль на hse.ru ↗ тел.: +7 (903) 970-72-53 | 15220
Публикаций
75
Языков
2
Наград
5
Конференций
0
Профиль Публикации (75) Курсы (5)

Профессиональные интересы

физикасверхпроводимостьсверхпроводниковая электроникасверхпроводниковый однофотонный детекторквантовая оптикаинтегральная оптика

Должности

  • Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Департамент электронной инженерии

Био

  • · Начал работать в НИУ ВШЭ в 2013 году.
  • · Научно-педагогический стаж: 24 года.

Образование

  • 2016 · Доктор физико-математических наук
  • 2006 · Кандидат физико-математических наук
  • 2000 · Специалитет: Московский педагогический государственный университет, специальность «Физика с дополнительной специальностью филология», квалификация «Учитель физики и иностранного языка (английский язык)»

Опыт работы

  • · 2022: настоящее время: профессор, МИЭМ НИУ ВШЭ
  • · 2007 - 2022: : профессор, Московский педагогический государственный университет (МПГУ)
  • · 2013: настоящее время: доцент, МИЭМ НИУ ВШЭ
  • · 2015 - 2016: : доцент, Московский физико-технический институт (МФТИ)
  • · 2014 - 2016: : ведущий научный сотрудник, заведующий лабораторией, Московский физико-технический институт (МФТИ)
  • · 2005 - 2007: : старший преподаватель, Московский педагогический государственный университет (МПГУ)
  • · 2000 - 2005: : научный сотрудник, Московский педагогический государственный университет (МПГУ)

Награды и поощрения

  • · Благодарность Московского института электроники и математики им. А.Н. Тихонова НИУ ВШЭ (февраль 2026)
  • · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025, 2023–2024)
  • · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2019–2021)
  • · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
  • · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)

Гранты и проекты

  • — · на соискание учёной степени кандидата наук

Идентификаторы исследователя

Публикации (75)

Superconducting nanowire single-photon detector on lithium niobate

2018 · ARTICLE · en

We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s-1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.

DOI ↗ PDF ↗

Thermal properties of NbN single-photon detectors

2018 · ARTICLE · en

We investigate thermal properties of a NbN single-photon detector capable of unit internal detec- tion efficiency. Using an independent calibration of the coupling losses we determine the absolute optical power absorbed by the NbN film and, via a resistive superconductor thermometry, the ther- mal resistance Z(T) of the NbN film in dependence of temperature. In principle, this approach permits a simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous for their similar temperature dependencies. We analyze the Z(T) within the two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.

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Optimization of on-chip photonic delay lines for telecom wavelengths

2018 · ARTICLE · en

In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm

DOI ↗ PDF ↗

Superconducting single-photon detector for integrated waveguide spectrometer

2018 · ARTICLE · en

We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.

DOI ↗ PDF ↗

Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide

2018 · ARTICLE · en

We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si 3 N 4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.

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Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing

2018 · ARTICLE · en

Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2× 10 5) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.

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Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing

2018 · ARTICLE · en

In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q= 5× 105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q 3

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On-chip controlled placement of nanodiamonds with a nitrogen-vacancy color centers (NV)

2018 · ARTICLE · en

Here we studied the fabrication technique of a kilopixel array of nanodiamonds with a nitrogen-vacancy color centers (NV) on top of the chip and measured the second-order correlation function deep, clearly demonstrated the presence of single-photon sources. The controlled position of nanodiamonds, determined from the measurement of second-order correlation function was realized, as well as the yield of optimized technique equals 12.5% is shown.

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Superconducting detector for visible and near-infrared quantum emitters [Invited]

2017 · ARTICLE · en

Further development of quantum emitter based communication and sensing applications intrinsically depends on the availability of robust single-photon detectors. Here, we demonstrate a new generation of superconducting single-photon detectors specifically optimized for the 500-1100 nm wavelength range, which overlaps with the emission spectrum of many interesting solid-state atom-like systems, such as nitrogen-vacancy and silicon-vacancy centers in diamond. The fabricated detectors have a wide dynamic range (up to 350 million counts per second), low dark count rate (down to 0.1 counts per second), excellent jitter (62 ps), and the possibility of on-chip integration with a quantum emitter. In addition to performance characterization, we tested the detectors in real experimental conditions involving nanodiamond nitrogen-vacancy emitters enhanced by a hyperbolic metamaterial.

DOI ↗ PDF ↗

Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors

2017 · ARTICLE · en

We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 ± 1) ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions.

DOI ↗ PDF ↗

Курсы (5)