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Корнеев Александр Александрович

Московский институт электроники и математики им. А.Н. Тихонова

Профиль на hse.ru ↗ тел.: +7 (903) 970-72-53 | 15220
Публикаций
75
Языков
2
Наград
5
Конференций
0
Профиль Публикации (75) Курсы (5)

Профессиональные интересы

физикасверхпроводимостьсверхпроводниковая электроникасверхпроводниковый однофотонный детекторквантовая оптикаинтегральная оптика

Должности

  • Профессор — Московский институт электроники и математики им. А.Н. Тихонова, Департамент электронной инженерии

Био

  • · Начал работать в НИУ ВШЭ в 2013 году.
  • · Научно-педагогический стаж: 24 года.

Образование

  • 2016 · Доктор физико-математических наук
  • 2006 · Кандидат физико-математических наук
  • 2000 · Специалитет: Московский педагогический государственный университет, специальность «Физика с дополнительной специальностью филология», квалификация «Учитель физики и иностранного языка (английский язык)»

Опыт работы

  • · 2022: настоящее время: профессор, МИЭМ НИУ ВШЭ
  • · 2007 - 2022: : профессор, Московский педагогический государственный университет (МПГУ)
  • · 2013: настоящее время: доцент, МИЭМ НИУ ВШЭ
  • · 2015 - 2016: : доцент, Московский физико-технический институт (МФТИ)
  • · 2014 - 2016: : ведущий научный сотрудник, заведующий лабораторией, Московский физико-технический институт (МФТИ)
  • · 2005 - 2007: : старший преподаватель, Московский педагогический государственный университет (МПГУ)
  • · 2000 - 2005: : научный сотрудник, Московский педагогический государственный университет (МПГУ)

Награды и поощрения

  • · Благодарность Московского института электроники и математики им. А.Н. Тихонова НИУ ВШЭ (февраль 2026)
  • · Надбавка за публикацию в журнале из Списка А (и приравненном к нему научном издании) (2025–2026, 2024–2025, 2023–2024)
  • · Надбавка за публикацию в международном рецензируемом научном издании (2022–2023, 2021–2022, 2019–2021)
  • · Надбавка за статью в зарубежном рецензируемом журнале (2014–2016)
  • · Надбавка за статью в зарубежном рецензируемом научном издании (2016–2018)

Гранты и проекты

  • — · на соискание учёной степени кандидата наук

Идентификаторы исследователя

Публикации (75)

Control of thin NbN film superconducting properties by ScN buffer layer

2026 · ARTICLE · en

This work investigates the effect of a scandium nitride (ScN) buffer layer on the superconducting properties of niobium nitride (NbN) thin films. The use of a ScN buffer layer significantly improves the characteristics of 29 nm-thick NbN films: the critical temperature increases from 9 K to 12.5 K, while the resistivity at 20 K decreases from 330 µΩ·cm to 210 µΩ·cm compared to films without a buffer layer. These enhancements are attributed to the better lattice matching between NbN and ScN, which results in а higher quality crystal lattice of the NbN film, as confirmed by transmission electron microscopy and x-ray diffraction data.

DOI ↗ PDF ↗

Ultrafast NbN superconducting single-photon detector integrated in a parabolic mirror

2025 · ARTICLE · en

This work describes research and development of a superconducting nanowire single-photon detector (SNSPD) integrated with a parabolic mirror fabricated in a silicon wafer by focused ion beam etching. Using finite-difference time-domain simulations of the electromagnetic field distribution within the mirror and on its surface, the geometry of the molybdenum mirror was designed for efficient collection of light into a 1.5 µm spot. Reduction of the area of the SNSPD to 1.5 µm × 1.5 µm resulted in low kinetic inductance and faster operation. Although the detector response is currently limited by the 1 GHz band of the read-out electronics, the simulation suggests reduction of the detector dead time to 348 ps.

DOI ↗ PDF ↗

Practical way to increase nonlinearity of kinetic inductance of superconductor

2025 · ARTICLE · en

This work demonstrates that depositing a thin layer of Mo (5–15 nm) onto a 10 nm thick NbN strip leads to a significant increase in the nonlinearity of the kinetic inductance . Specifically, the change in with increasing current reached 70% in the NbN/Mo bilayer at liquid helium temperature, whereas in the NbN strip, changed by only 10% in the superconducting state. In addition to altering the nonlinear properties, the Mo layer caused a significant increase in the critical current at low temperatures (up to 2 times in the case of a 5 nm thick Mo layer). The increased nonlinearity of can be explained by two factors: (i) a reduction of the critical supervelocity at which the superconducting state becomes unstable when a Mo layer is deposited on NbN, and (ii) a higher sensitivity of the induced superconductivity in Mo to supervelocity/supercurrent. Considering the results on the transport properties of SN bilayers with a high ratio of layer resistivities , it can be concluded that depositing a thin layer of a relatively low-resistivity metal onto a superconductor with high is a practical method for achieving a large nonlinearity of the superconductor’s kinetic inductance.

DOI ↗ PDF ↗

Molybdenum low-resistance thin-film resistors for cryogenic devices

2024 · ARTICLE · en

Wepresent a study of thin-film Mo resistors for NbN electronics operating at cryogenic temperatures. The key step is the 0.5–1.5 keV ion cleaning–activation of NbN before Mo deposition, which allows us to obtain a high-quality Mo/NbN interface. This, together with an additional Al bandage layer in the area of the contact pads, allows us to reduce the contact resistance below 1 Ω. The quality of the interfaces is confirmed by transmission electron microscopy and x-ray reflectometry.

DOI ↗ PDF ↗

Micrometer-Wide NbN Strips for Photon-Number-Resolving Detection

2023 · ARTICLE · en

We report the development of photon-number-resolving superconducting single-photon detector with micron-scale NbN strips. The detector is designed as serial meander-shaped strips with resistors connected in parallel to each strip. We investigate the performance of the detectors comprising of 5–14 strips with the widths in the range 0.3–1 μm and covering an area as large as 70 × 70 μm2 making it feasible for coupling to multimode fibers. We demonstrate resolution of up to six photons and analyze the sources of errors in photon-number resolution.

DOI ↗ PDF ↗

Modeling of distinguishability of nonsimultaneous two-photon events in micron-width superconducting strips

2023 · ARTICLE · en

Superconducting single photon detectors (SSPD or SNSPD) are excellent for detecting single photons. The principle of their operation is based on a local violation of superconductivity as a result of an absorbed photon, the formation of a hot spot with a normal domain, followed by a voltage pulse. Recent studies show that SSPDs based on micron-wide strips can also detect single photons. SSPDs can be used to distinguish between single-photon, two-photon and many-photon events by the amplitude of the voltage pulse if a proper impedance transformer is used, or by the shape of the front edge of the voltage pulse when using high frequency read-out and subsequent pulse shape analysis. However, in all cases it is considered that two photons are absorbed and form hot spots simultaneously. In a real experiment however, two photons have different optical paths and as a consequence a bit different arrival times. In this work, electrothermal simulation of the evolution of two hot spots formed with a time delay is carried out in the two-dimensional case. The possibility of distinguishing two-photon events from single-photon events is estimated for different delay values for different readout schemes.

DOI ↗

Resource-efficient low-loss four-channel active demultiplexer for single photons

2023 · ARTICLE · en

We report a design and implementation of a resource-efficient spatial demultiplexer which produces four indistinguishable photons with efficiency of 39.7% per channel. Our scheme is based on a free-space storage/delay line which accumulates four photons and releases them by a controlled polarization rotation using a single Pockels cell.

DOI ↗

Моделирование двухфотонных событий в сверхпроводящей полоске для различной длины тепловой связи

2023 · ARTICLE · ru

Представлены результаты исследования эволюции двух горячих пятен, образованных одновременным поглощением двух фотонов. Оценивались время жизни нормальных доменов и максимальное сопротивление сверхпроводящей полоски в зависимости от расстояния между поглощенными фотонами. Минимальное расстояние между краями распределения температур горячих пятен, приводящее к потере термической связи, равно 28 nm, что согласуется с экспериментальными данными. Была оценена возможность различения двухфотонных событий для различных схем считывания. Ключевые слова: сверхпроводимость, SSPD, горячее пятно, полоска NbN.

DOI ↗ PDF ↗

Electrothermal Model of a Microstrip Superconducting Detector with Photon Number Resolution

2022 · ARTICLE · en

An electrothermal model is used to perform a theoretical analysis of the operation of a superconducting detector based on a strip of micrometer width and having photon number resolution. Configurations with series and parallel connections of detector sections are investigated. It is established that when such microstrips are used, a series connection of sections is better in terms of the number of simultaneously resolved photons and the amplitude of the response from a superconductor detector.

DOI ↗ PDF ↗

New design of a waveguide integrated photon number resolving superconducting detector with micron-wide strips

2022 · ARTICLE · en

We report on the development of a design for a waveguide integrated photon number resolving superconducting detector with micron-wide strips. The detector is designed for a 1550-nm-wavelength single-mode waveguide. Using the planarization operation, it is possible to cover the waveguide and the entire area around it with a dielectric layer, producing a flat surface for the superconducting detector fabrication. The detector is formed in a shape of a straight line directly above the waveguide. The length and width of the superconducting detector are chosen to absorb maximum of the radiation from the waveguide. In the same superconductor layer, the Klopfenstein taper impedance transformer is designed as a non-uniform coplanar line. The use of impedance matching Klopfenstein tapers makes it possible to distinguish the resistances of several hot spots, that is, to distinguish the number of absorbed photons. The detector should absorb almost all radiation and be capable to distinguish up to 3 photons in an optical pulse.

DOI ↗ PDF ↗

Курсы (5)